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Ryota Negishi

Faculty
Department of Electrical and Electronic Engineering
Research Institute of Industrial Technology
PositionAssociate Professor
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Birthday
Last Updated :2020/07/09

Researcher Profile and Settings

Education

  •   2000 04  - 2003 08 , Yokohama City University, Graduate
  •   1998 04  - 2000 03 , Yokohama City University, Graduate

Academic & Professional Experience

  •   2020 04  - 現在, Toyo University, Faculty of Science and Engineering Department of Electrical Electronic and Computer Engineering, Associate Professor
  •   2009 11  - 2020 03 , Osaka University, Graduate School of Engineering

Research Activities

Research Areas

  • Nanotechnology/Materials, Composite materials and interfaces
  • Nanotechnology/Materials, Thin-film surfaces and interfaces
  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electronic devices and equipment
  • Natural sciences, Semiconductors, optical and atomic physics

Published Papers

  • Neuromorphic Switching Behavior in the Multi-stacking Composed of Pt/Graphene Oxide/Ag2S/Ag, Bruno Kenichi Saika, Ryota Negishi, Yoshihiro Kobayashi, Corresponding author, Japanese Journal of Applied Physics, Japanese Journal of Applied Physics, 58, (SIID08) 1 - 5, 07 , Refereed
  • Turbostratic multilayer graphene synthesis on CVD graphene template toward improving electrical performance, Chaopeng Wei, Ryota Negishi, Yui Ogawa, Masashi Akabori, Yoshitaka Taniyasu, Yoshihiro Kobayashi, Japanese Journal of Applied Physics, Japanese Journal of Applied Physics, 58, (SIID04) 1 - 5, 06 , Refereed
  • Diameter dependence of longitudinal unzipping of single-walled carbon nanotube to obtain graphene nanoribbon, Minoru Fukumori, Reetu Raj Pandey, Taizo Fujiwara, Amin TermehYousefi, Ryota Negishi, Yoshihiro Kobayashi, Hirofumi Tanaka, Takuji Ogawa, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPANESE JOURNAL OF APPLIED PHYSICS, 56, (6) , 06 , Refereed
  • Chirality dependence of Longitudinal Unzipping of Single-Walled Carbon Nanotube to obtain Graphene Nanoribbon, M. Fukumori, R. R. Pandey, T. Fujiwara, A. TermehYousefi, R. Negishi, Y. Kobayashi, H. Tanaka, T. Ogawa, Jpn. J. Appl. Phys., Jpn. J. Appl. Phys., 56, 05 30 , Refereed
  • Synthesis of very narrow multilayer graphene nanoribbon with turbostratic stacking, R. Negishi, K. Yamamoto, H. Kitakawa, M. Fukumori, H. Tanaka, T. Ogawa, Y. Kobayashi, APPLIED PHYSICS LETTERS, APPLIED PHYSICS LETTERS, 110, (20) 201901/1 - 4, 05 , Refereed
  • Band-like transport in highly crystalline graphene films from defective graphene oxides, R. Negishi, M. Akabori, T. Ito, Y. Watanabe, Y. Kobayashi, SCIENTIFIC REPORTS, SCIENTIFIC REPORTS, 6, 28936/1 - 10, 07 , Refereed
  • Method for Controlling Electrical Properties of Single-Layer Graphene Nanoribbons via Adsorbed Planar Molecular Nanoparticles, 5, 12341/1 - 8, Refereed
  • Extraordinary suppression of carrier scattering in large area graphene oxide films, R. Negishi, Y. Kobayashi, APPLIED PHYSICS LETTERS, APPLIED PHYSICS LETTERS, 105, (25) 253502/1 - 5, 12 , Refereed
  • Influence of nanoparticle size to the electrical properties of naphthalenediimide on single-walled carbon nanotube wiring, Hirofumi Tanaka, Liu Hong, Minoru Fukumori, Ryota Negishi, Yoshihiro Kobayashi, Daisuke Tanaka, Takuji Ogawa, NANOTECHNOLOGY, NANOTECHNOLOGY, 23, (21) 215701/1 - 6, 06 , Refereed
  • Carrier Transport Properties of the Field Effect Transistors with Graphene Channel Prepared by Chemical Vapor Deposition, Ryota Negishi, Yasuhide Ohno, Kenzo Maehashi, Kazuhiko Matsumoto, Yoshihiro Kobayashi, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPANESE JOURNAL OF APPLIED PHYSICS, 51, (6) 06FD03/1 - 4, 06 , Refereed
  • Layer-by-layer growth of graphene layers on graphene substrates by chemical vapor deposition, Ryota Negishi, Hiroki Hirano, Yasuhide Ohno, Kenzo Maehashi, Kazuhiko Matsumoto, Yoshihiro Kobayashi, THIN SOLID FILMS, THIN SOLID FILMS, 519, (19) 6447 - 6452, 07 , Refereed
  • Thickness Control of Graphene Overlayer via Layer-by-Layer Growth on Graphene Templates by Chemical Vapor Deposition, Ryota Negishi, Hiroki Hirano, Yasuhide Ohno, Kenzo Haehashi, Kazuhiko Matsumoto, Yoshihiro Kobayashi, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPANESE JOURNAL OF APPLIED PHYSICS, 50, (6) 06GE04/1 - 4, 06 , Refereed
  • Fabrication of Nanogap Electrodes by the Molecular Lithography Technique, Takayuki Nishino, Ryota Negishi, Hirofumi Tanaka, Takuji Ogawa, Koji Ishibashi, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPANESE JOURNAL OF APPLIED PHYSICS, 50, (3) 035204/1 - 6, 03 , Refereed
  • The fabrication and single electron transport of Au nano-particles placed between Nb nanogap electrodes, T. Nishino, R. Negishi, M. Kawao, T. Nagata, H. Ozawa, K. Ishibashi, NANOTECHNOLOGY, NANOTECHNOLOGY, 21, (22) 225301/1 - 6, 06 , Refereed
  • Strain induced modification of quasi-two-dimensional electron gas state on root 3x root 3-Ag structure, Izumi Mochizuki, Ryota Negishi, Yukichi Shigeta, JOURNAL OF APPLIED PHYSICS, JOURNAL OF APPLIED PHYSICS, 107, (8) 084317/1 - 3, 04 , Refereed
  • Modification of electronic states of root 3x root 3-Ag structure by strained Ge/Si(111) substrate, Izumi Mochizuki, Ryota Negishi, Yukichi Shigeta, JOURNAL OF APPLIED PHYSICS, JOURNAL OF APPLIED PHYSICS, 106, (1) 013709/1 - 4, 07 , Refereed
  • Size-dependent single electron tunneling effect in Au nanoparticles, R. Negishi, T. Hasegawa, H. Tanaka, K. Terabe, H. Ozawa, T. Ogawa, M. Aono, SURFACE SCIENCE, SURFACE SCIENCE, 601, (18) 3907 - 3911, 09 , Refereed
  • I-V characteristics of single electron tunneling from symmetric and asymmetric double-barrier tunneling junctions, R. Negishi, T. Hasegawa, K. Terabe, M. Aono, H. Tanaka, T. Ogawa, H. Ozawa, APPLIED PHYSICS LETTERS, APPLIED PHYSICS LETTERS, 90, (22) 223112/1 - 3, 05 , Refereed
  • Growth of metallic Au adsorbed islands on the Si(111)-(7 x 7) substrate, Izumi Mochizuki, Ryota Negishi, Yukichi Shigeta, PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 61, 1056 - 1060, Refereed
  • Fabrication of nanoscale gaps using a combination of self-assembled molecular and electron beam lithographic techniques, R Negishi, T Hasegawa, K Terabe, M Aono, T Ebihara, H Tanaka, T Ogawa, APPLIED PHYSICS LETTERS, APPLIED PHYSICS LETTERS, 88, (22) 223111/1 - 3, 05 , Refereed
  • Fabrication of uniform Au silicide islands on the Si(111)-(7 x 7) substrate, R Negishi, Mochizuki, I, Y Shigeta, SURFACE SCIENCE, SURFACE SCIENCE, 600, (5) 1125 - 1128, 03 , Refereed
  • Strain and electronic structure of Ge nanoislands on Si(111)-7x7 surface, M Suzuki, R Negishi, Y Shigeta, PHYSICAL REVIEW B, PHYSICAL REVIEW B, 72, (23) 235325/1 - 5, 12 , Refereed
  • Ionic-electronic conductor nanostructures: Template-confined growth and nonlinear electrical transport, CH Liang, K Terabe, T Hasegawa, R Negishi, T Tamura, M Aono, SMALL, SMALL, 1, (10) 971 - 975, 09 , Refereed
  • Electronic structures of dangling-bond states on the Si nanoisland and the Si(111) 7x7 substrate, R Negishi, M Suzuki, Y Shigeta, JOURNAL OF APPLIED PHYSICS, JOURNAL OF APPLIED PHYSICS, 98, (6) 063712/1 - 5, 09 , Refereed
  • Growth of nanoscale Si and Ge islands on S i (111)-7 X7substrate, 75 - 91, Refereed
  • Study of photoelectron spectroscopy from extremely uniform Si nanoislands on Si(111) 7x7 substrate, R Negishi, M Suzuki, Y Shigeta, JOURNAL OF APPLIED PHYSICS, JOURNAL OF APPLIED PHYSICS, 96, (9) 5013 - 5016, 11 , Refereed
  • Interrelations between the local electronic states and the atomic structures in the Si nanoscale island on Si(111)-(7x7) surface, R Negishi, Y Shigeta, JOURNAL OF APPLIED PHYSICS, JOURNAL OF APPLIED PHYSICS, 93, (8) 4824 - 4830, 04 , Refereed
  • Local structure and electronic state of a nanoscale Si island on Si(111)-7x7 substrate, R Negishi, Y Shigeta, SURFACE SCIENCE, SURFACE SCIENCE, 507, 582 - 587, 06 , Refereed
  • Nucleation of polycrystalline layer induced by formation of 30 degrees partial dislocation during Si/Si(111) growth, R Negishi, Y Shigeta, SURFACE SCIENCE, SURFACE SCIENCE, 505, (1-3) 225 - 233, 05 , Refereed
  • Surface roughening induced by a characteristic surface structure of a Si film grown on Si(111), R Negishi, Y Shigeta, SURFACE SCIENCE, SURFACE SCIENCE, 481, (1-3) 67 - 77, 06 , Refereed

Conference Activities & Talks

  • Anomalous electrical transport properties of multilayer graphene with turbostratic stacking fabricated by CVD on graphene templates, Negishi Ryota, Workshop Hybrid Quantum,   2019 06 25 , Invited

Patents

  • Field Effect Transistor and Sensor using Same, 特願15/501991
  • 特願13764981, 特許9440855
  • 特願2012-27970, 特開2016-047777
  • 特願2014-172628
  • 特願2014-162737
  • 特願2013-105560