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Tomomi Yoshimoto

Faculty
Department of Electrical and Electronic Engineering
Research Institute of Industrial Technology
Course of Electricity, Electronics and Communications
PositionProfessor
Mail
HomepageURL
Birthday
Last Updated :2020/07/09

Researcher Profile and Settings

Education

  •  - 1990 , Tokai University, Graduate School of Engineering
  •  - 1990 , TOKAI UNIVERSITY, Graduate School, Division of Engineering
  •  - 1988 , Tokai University, School of Engineering
  •  - 1988 , TOKAI UNIVERSITY, Faculty of Engineering

Research Activities

Research Areas

  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electronic devices and equipment
  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering

Research Interests

    electron device

Published Papers

  • Field-Emission from Finely Nicked Structures on n-Type Silicon Substrate Formed by Sandblasting Process, T. Yoshimoto, T. Iwata, EICE TRANS. ELECTRON, EICE TRANS. ELECTRON, E102-C, (No.2) 207 - 210, 02 , Refereed
  • Field-emission Characteristics of a Focused-Ion-Beam-Sharpened P-Type Silicon Single Emitter, Tomomi Yoshimoto, Tatsuo Iwata, IEICE TRANSACTIONS ON ELECTRONICS, IEICE TRANSACTIONS ON ELECTRONICS, E98C, (4) 371 - 376, 04 , Refereed
  • Low-Temperature Thermionic Emission from Diamond Micropowders with Sharp Edges, Tomomi Yoshimoto, Tatsuo Iwata, IEICE TRANSACTIONS ON ELECTRONICS, IEICE TRANSACTIONS ON ELECTRONICS, E96C, (1) 132 - 134, 01 , Refereed
  • Improvement of Turn-On Voltage by Thermal Annealing of a Tungsten Single Emitter Coated with a Carbonaceous Film Deposited in Liquid Methanol, Tomomi Yoshimoto, Tatsuo Iwata, IEICE TRANSACTIONS ON ELECTRONICS, IEICE TRANSACTIONS ON ELECTRONICS, E94C, (12) 1913 - 1916, 12 , Refereed
  • Field emission from diamond micropowders with sharp edges, Tomomi Yoshimoto, Hisanori Yui, Tatsuo Iwata, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 28, (2) C2B30 - C2B33, 03 , Refereed
  • Field Emission from a P-Type Si Single Emitter Sharpened by Focused Ion Beam Milling, T. YOSHIMOTO, K. SATO, T. IWATA, Jpn. J. Appl. Phys., Jpn. J. Appl. Phys., Vol.49, 070212-1 - 0702012-3, Refereed

Misc

  • Field-Emission from n-Type Si Surface Sandblasted by Al2O3 Fine Particles, T. Yoshimoto, T. Iwata, 31st International Vacuum Nanoelectronics Conference (IVNC 2018),   2018 07 , 査読有り
  • Lowering of Threshold Voltage by Thermal Annealing of Diamond Micropowder Field Emitter, Tomomi Yoshimoto, Yoshiaki Sugimoto, Tatsuo Iwata, IEICE TRANSACTIONS ON ELECTRONICS, E98C, (10) 995 - 998,   2015 10 , 査読有り, The effect of annealing on the field emission characteristics of a field emitter comprising diamond micropowder was investigated. The threshold voltage V-th at which the emission current begins to flow decreased as the annealing temperature increased, and a minimum V-th was obtained at an annealing temperature of 1345 K. The reduction in threshold voltage was due to a reduction in the work function with annealing.
  • Light intensity and temperature dependence of field emission current from a p-type Si emitter milled by gallium focused ion beam, T. YOSHIMOTO, I. IWATA, 26th International Microprocesses and Nanotechnology Conference (MNC )2013, 8P-11-52,   2013 11 , 査読有り

Research Grants & Projects

  • Field Emission from Carbon Nanotube, Cooperative Research
  • Field Emission From Semiconductor, Cooperative Research